Refractive index changes in a GaAs multiple quantum well structure produced by impurity-induced disordering using boron and fluorine

Refractive index changes in a GaAs multiple quantum well structure produced by impurity-induced disordering using boron and fluorine

The effect of boron and fluorine impurity-induced disordering on the refractive index of AlxGa1−xAs multiple quantum well waveguides has been studied experimentally using a grating coupler formed in low-index material. Substantial changes ≳1% in the refractive index, were obtained in partially disor...

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Bibliographic Details
Published in:Applied physics letters Vol. 58; no. 13; pp. 1398 - 1400
Main Authors: HANSEN, S. I, MARSH, J. H, ROBERTS, J. S, GWILLIAM, R
Format: Journal Article
Language:English
Published: Melville, NY American Institute of Physics 01-04-1991
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
Gallium Arsenides
Boron
Fluorite
Impurity
Refraction index
Multiple quantum well
Wavelength
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Summary:The effect of boron and fluorine impurity-induced disordering on the refractive index of AlxGa1−xAs multiple quantum well waveguides has been studied experimentally using a grating coupler formed in low-index material. Substantial changes ≳1% in the refractive index, were obtained in partially disordered material over the measured wavelength range. Fluorine was found to produce larger changes than boron for similar annealing conditions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104320