Generation and characterization of polymeric tridimensional microstructures for micromachine application
In this work, we use the thick layer of polymethylmethacrylate polymer, for micromachining development. In the development of the structures, a three layer process is used. In a silicon wafer is deposited the thick layer spin coating. Over this layer is deposited a thin layer of silicon. The third l...
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Published in: | Microelectronics Vol. 34; no. 5-8; pp. 651 - 653 |
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Main Authors: | , , |
Format: | Journal Article |
Language: | English |
Published: |
Elsevier Ltd
01-05-2003
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Subjects: | |
Online Access: | Get full text |
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Summary: | In this work, we use the thick layer of polymethylmethacrylate polymer, for micromachining development. In the development of the structures, a three layer process is used. In a silicon wafer is deposited the thick layer spin coating. Over this layer is deposited a thin layer of silicon. The third layer is 1.5 μm of e-beam resist deposited by spin coating. After the deposition of the layers, we perform the e-beam lithography in the top layer resist. This pattern is transferred by plasma etching for the silicon layer. The resolution limits of this process is the resolution of the electron resist and is increased to 0.25 μm (nanometric resolution), using an electron beam spot size of 50 nm and dry development. |
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ISSN: | 1879-2391 1879-2391 |
DOI: | 10.1016/S0026-2692(03)00085-5 |