Temperature effects on the fabrication of optical channels in planar GaAs/AlGaAs waveguides using MeV ions

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 141; no. 1; pp. 704 - 708
• Main Authors: Taylor, T, Ila, D, Zimmerman, R.L, Cochrane, J.C, Ashley, P.R, Poker, D.B, Hensley, D.K
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-05-1998
• Subjects: GaAs/AlGaAs; Ion implantation; Optical waveguides; 42.70.Nq; Ion implantation; 61.82.Fk; GaAs/AlGaAs; 61.72.Ww; Optical waveguides
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/S0168-583X(98)00119-0

We have fabricated optical channels in selectively masked planar GaAs/AlGaAs waveguide structures using both 10 MeV oxygen and 8 MeV carbon ions. Implantation at different temperatures appears to have a direct effect on the extracted propagation mode losses. Single-mode operation was observed from all the fabricated optical channels at a wavelength of 1.3 μm. The optical characterization results provide insight as to which ion beam parameters are best suited to optimize this fabrication process.