Dopant boron concentration dependence on electron irradiation enhanced defects in Czochralski silicon

Positron annihilation lifetime experiments have been performed for CZ-Si with B concentration ranging over 8.3×10 17–2.5×10 20/cm 3 irradiated with 6 MeV electrons at room temperature. The mean lifetimes were hardly changed in the specimens with B below 8.0×10 18/cm 3, and increased in the specimen...

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Bibliographic Details

Published in:	Physica. B, Condensed matter Vol. 308; pp. 261 - 264
Main Authors:	Tamano, T., Hori, F., Taniguchi, R., Oshima, R., Hoshikawa, K.
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-12-2001
Subjects:	Czochralski-grown silicon Dopant boron Electron irradiation Positron lifetime Czochralski-grown silicon Positron lifetime Electron irradiation Dopant boron
Online Access:	Get full text
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