Dopant boron concentration dependence on electron irradiation enhanced defects in Czochralski silicon
Positron annihilation lifetime experiments have been performed for CZ-Si with B concentration ranging over 8.3×10 17–2.5×10 20/cm 3 irradiated with 6 MeV electrons at room temperature. The mean lifetimes were hardly changed in the specimens with B below 8.0×10 18/cm 3, and increased in the specimen...
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| Published in: | Physica. B, Condensed matter Vol. 308; pp. 261 - 264 |
|---|---|
| Main Authors: | , , , , |
| Format: | Journal Article |
| Language: | English |
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Elsevier B.V
01-12-2001
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| Abstract | Positron annihilation lifetime experiments have been performed for CZ-Si with B concentration ranging over 8.3×10
17–2.5×10
20/cm
3 irradiated with 6
MeV electrons at room temperature. The mean lifetimes were hardly changed in the specimens with B below 8.0×10
18/cm
3, and increased in the specimen above 8.6×10
19/cm
3 by irradiation. No remarkable lifetime change with B concentration was obtained with the increase of electron fluence up to 5×10
15
e/cm
2, and the mean lifetimes of the specimens with B more than 8.6×10
19/cm
3 increased with electron fluences higher than 1×10
16
e/cm
2. It is concluded that complex defect clusters of B
x
O
y
V
z
are formed by electron irradiation, which have shorter positron lifetimes than the bulk. |
|---|---|
| AbstractList | Positron annihilation lifetime experiments have been performed for CZ-Si with B concentration ranging over 8.3×10
17–2.5×10
20/cm
3 irradiated with 6
MeV electrons at room temperature. The mean lifetimes were hardly changed in the specimens with B below 8.0×10
18/cm
3, and increased in the specimen above 8.6×10
19/cm
3 by irradiation. No remarkable lifetime change with B concentration was obtained with the increase of electron fluence up to 5×10
15
e/cm
2, and the mean lifetimes of the specimens with B more than 8.6×10
19/cm
3 increased with electron fluences higher than 1×10
16
e/cm
2. It is concluded that complex defect clusters of B
x
O
y
V
z
are formed by electron irradiation, which have shorter positron lifetimes than the bulk. |
| Author | Tamano, T. Oshima, R. Hori, F. Hoshikawa, K. Taniguchi, R. |
| Author_xml | – sequence: 1 givenname: T. surname: Tamano fullname: Tamano, T. email: tamano@mtl.osakafu-u.ac.jp organization: Department of Material Engineering, Osaka Prefecture University, 1-1, Gakuen-cho, Sakai, Osaka 599-8531, Japan – sequence: 2 givenname: F. surname: Hori fullname: Hori, F. organization: Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2, Gakuen-cho, Sakai, Osaka 599-8570, Japan – sequence: 3 givenname: R. surname: Taniguchi fullname: Taniguchi, R. organization: Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2, Gakuen-cho, Sakai, Osaka 599-8570, Japan – sequence: 4 givenname: R. surname: Oshima fullname: Oshima, R. organization: Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-2, Gakuen-cho, Sakai, Osaka 599-8570, Japan – sequence: 5 givenname: K. surname: Hoshikawa fullname: Hoshikawa, K. organization: Department of Education, Shinsyu University, 6-kuthi Nishi-Nagano, Nagano, Nagano 380-8544, Japan |
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| Cites_doi | 10.1103/PhysRevB.61.8155 10.1016/0010-4655(81)90006-0 10.1103/PhysRevB.14.2709 10.1143/JJAP.38.2679 10.1149/1.2097135 10.1103/PhysRevB.53.7810 10.4028/www.scientific.net/MSF.105-110.1301 10.1143/JJAP.39.4693 10.1143/JJAP.40.452 10.1103/PhysRevLett.67.212 |
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| Keywords | Czochralski-grown silicon Positron lifetime Electron irradiation Dopant boron |
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| References | Uedono, Ujihira, Ikari, Yoda (BIB8) 1992; 105 Tamano, Hori, Oshima, Hisamatsu (BIB1) 2000; 39 Cowern, van de Walle, Gravesteijn, Vriezema (BIB9) 1991; 67 Khan, Yamaguchi, Taylor, Hisamatsu, Matsuda (BIB10) 1999; 38 A. Baghdadi, W.M. Bullis, M.C. Croarkin, Yue-zhen Li, R.I. Scace, R.W. Series, P. Stallhofer, M. Watanabe, J. Electrochem. Soc. 136 (1989) 2015. Dannefaer, Dean, Kerr, Hogg (BIB5) 1976; 14 Saito, Oshiyama (BIB4) 1996; 53 Hakala, Puska, Nieminen (BIB7) 2000; 61 Tamano, Hori, Oshima, Hisamatsu (BIB6) 2001; 40 Kirkegaard, Eldrup, Mogensen, Pedersen (BIB3) 1981; 23 Uedono (10.1016/S0921-4526(01)00787-6_BIB8) 1992; 105 10.1016/S0921-4526(01)00787-6_BIB2 Kirkegaard (10.1016/S0921-4526(01)00787-6_BIB3) 1981; 23 Saito (10.1016/S0921-4526(01)00787-6_BIB4) 1996; 53 Khan (10.1016/S0921-4526(01)00787-6_BIB10) 1999; 38 Cowern (10.1016/S0921-4526(01)00787-6_BIB9) 1991; 67 Dannefaer (10.1016/S0921-4526(01)00787-6_BIB5) 1976; 14 Tamano (10.1016/S0921-4526(01)00787-6_BIB6) 2001; 40 Tamano (10.1016/S0921-4526(01)00787-6_BIB1) 2000; 39 Hakala (10.1016/S0921-4526(01)00787-6_BIB7) 2000; 61 |
| References_xml | – volume: 105 start-page: 1301 year: 1992 ident: BIB8 publication-title: Mater. Sci. Forum contributor: fullname: Yoda – volume: 39 start-page: 4693 year: 2000 ident: BIB1 publication-title: Jpn. J. Appl. Phys. contributor: fullname: Hisamatsu – volume: 23 start-page: 307 year: 1981 ident: BIB3 publication-title: Comput. Phys. Commun. contributor: fullname: Pedersen – volume: 38 start-page: 2679 year: 1999 ident: BIB10 publication-title: Jpn. J. Appl. Phys. contributor: fullname: Matsuda – volume: 40 start-page: 452 year: 2001 ident: BIB6 publication-title: Jpn. J. Appl. Phys. contributor: fullname: Hisamatsu – volume: 61 start-page: 8155 year: 2000 ident: BIB7 publication-title: Phys. Rev. B contributor: fullname: Nieminen – volume: 53 start-page: 7810 year: 1996 ident: BIB4 publication-title: Phys. Rev. B contributor: fullname: Oshiyama – volume: 67 start-page: 212 year: 1991 ident: BIB9 publication-title: Phys. Rev. Lett. contributor: fullname: Vriezema – volume: 14 start-page: 2709 year: 1976 ident: BIB5 publication-title: Phys. Rev. B contributor: fullname: Hogg – volume: 61 start-page: 8155 year: 2000 ident: 10.1016/S0921-4526(01)00787-6_BIB7 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.61.8155 contributor: fullname: Hakala – volume: 23 start-page: 307 year: 1981 ident: 10.1016/S0921-4526(01)00787-6_BIB3 publication-title: Comput. Phys. Commun. doi: 10.1016/0010-4655(81)90006-0 contributor: fullname: Kirkegaard – volume: 14 start-page: 2709 year: 1976 ident: 10.1016/S0921-4526(01)00787-6_BIB5 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.14.2709 contributor: fullname: Dannefaer – volume: 38 start-page: 2679 year: 1999 ident: 10.1016/S0921-4526(01)00787-6_BIB10 publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.38.2679 contributor: fullname: Khan – ident: 10.1016/S0921-4526(01)00787-6_BIB2 doi: 10.1149/1.2097135 – volume: 53 start-page: 7810 year: 1996 ident: 10.1016/S0921-4526(01)00787-6_BIB4 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.53.7810 contributor: fullname: Saito – volume: 105 start-page: 1301 year: 1992 ident: 10.1016/S0921-4526(01)00787-6_BIB8 publication-title: Mater. Sci. Forum doi: 10.4028/www.scientific.net/MSF.105-110.1301 contributor: fullname: Uedono – volume: 39 start-page: 4693 year: 2000 ident: 10.1016/S0921-4526(01)00787-6_BIB1 publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.39.4693 contributor: fullname: Tamano – volume: 40 start-page: 452 year: 2001 ident: 10.1016/S0921-4526(01)00787-6_BIB6 publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.40.452 contributor: fullname: Tamano – volume: 67 start-page: 212 year: 1991 ident: 10.1016/S0921-4526(01)00787-6_BIB9 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.67.212 contributor: fullname: Cowern |
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| Snippet | Positron annihilation lifetime experiments have been performed for CZ-Si with B concentration ranging over 8.3×10
17–2.5×10
20/cm
3 irradiated with 6
MeV... |
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| SubjectTerms | Czochralski-grown silicon Dopant boron Electron irradiation Positron lifetime |
| Title | Dopant boron concentration dependence on electron irradiation enhanced defects in Czochralski silicon |
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