Dopant boron concentration dependence on electron irradiation enhanced defects in Czochralski silicon

• Published in: Physica. B, Condensed matter Vol. 308; pp. 261 - 264
• Main Authors: Tamano, T., Hori, F., Taniguchi, R., Oshima, R., Hoshikawa, K.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-12-2001
• Subjects: Czochralski-grown silicon; Dopant boron; Electron irradiation; Positron lifetime; Czochralski-grown silicon; Positron lifetime; Electron irradiation; Dopant boron
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/S0921-4526(01)00787-6

Positron annihilation lifetime experiments have been performed for CZ-Si with B concentration ranging over 8.3×10
17–2.5×10
20/cm
3 irradiated with 6
MeV electrons at room temperature. The mean lifetimes were hardly changed in the specimens with B below 8.0×10
18/cm
3, and increased in the specimen above 8.6×10
19/cm
3 by irradiation. No remarkable lifetime change with B concentration was obtained with the increase of electron fluence up to 5×10
15
e/cm
2, and the mean lifetimes of the specimens with B more than 8.6×10
19/cm
3 increased with electron fluences higher than 1×10
16
e/cm
2. It is concluded that complex defect clusters of B
x
O
y
V
z
are formed by electron irradiation, which have shorter positron lifetimes than the bulk.