Dislocation-induced photoluminescence in silicon crystals of various impurity composition

Dislocation-induced photoluminescence in silicon crystals of various impurity composition

The effect of oxygen on the dislocation-induced photoluminescence (DPL) spectra at 4.2 K is studied in silicon crystals with different impurity compositions subjected to plastic deformation at temperatures above 1000°C. A strong effect of doping impurities on the DPL spectra is observed for concentr...

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Bibliographic Details
Published in:Physics of the solid state Vol. 45; no. 2; pp. 259 - 265
Main Authors: Shevchenko, S. A., Izotov, A. N.
Format: Journal Article
Language:English
Published: New York Springer Nature B.V 01-02-2003
Subjects:
Composition effects
Crystal dislocations
Crystals
Deformation effects
Impurities
Photoluminescence
Plastic deformation
Silicon
Spectra
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Summary:The effect of oxygen on the dislocation-induced photoluminescence (DPL) spectra at 4.2 K is studied in silicon crystals with different impurity compositions subjected to plastic deformation at temperatures above 1000°C. A strong effect of doping impurities on the DPL spectra is observed for concentrations above 1016 cm−3. It is shown that the peculiarities of many DPL spectra in silicon can be explained by assuming that the D1 and D2 lines are associated with edge-type dislocation steps on glide dislocations.
ISSN:1063-7834
1090-6460
DOI:10.1134/1.1553528