On the formation of the L-centre in silicon during heat treatment in the temperature range 205–285°C

On the formation of the L-centre in silicon during heat treatment in the temperature range 205–285°C

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Bibliographic Details
Published in:Physica scripta Vol. 2006; pp. 81 - 84
Main Authors: Mikelsen, M, Monakhov, E V, Avset, B S, Svensson, B G
Format: Journal Article
Language:English
Published: IOP Publishing 01-09-2006
Online Access:Get full text
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Description
ISSN:1402-4896
0031-8949
1402-4896
DOI:10.1088/0031-8949/2006/T126/019