Pressure dependence of electron transport in InP

• Published in: Applied physics letters Vol. 50; no. 25; pp. 1829 - 1831
• Main Authors: PATEL, D, SITES, J. R, SPAIN, I. L
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 22-06-1987
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Critical-point effects, specific heats, short-range order; Exact sciences and technology; Magnetic properties and materials; Physics; Energy gap; Semiconductor materials; Indium Phosphides; Electron phonon interaction; Charge carrier mobility; Hall effect; Experimental study; Effective mass; Photoconductivity; Pressure; Inorganic compound; High pressure
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.97711

Photoconductivity and Hall measurements in InP are presented for pressures up to 4 GPa using a diamond anvil cell. The application of pressure increases the direct energy band gap (E0), as seen by the shift of the photoconductivity edge to lower wavelength with increasing pressure. Hall measurements show a decrease in the electron mobility (μe) with pressure, due mainly to an increasing effective mass (m*e). Analysis of the pressure dependence of μe shows that polar optical scattering is the dominant mechanism.