Characterization of the implantation damage in SiO2 with x-ray photoelectron spectroscopy

• Published in: Applied physics letters Vol. 48; no. 20; pp. 1398 - 1399
• Main Authors: AJIOKA, T, USHIO, S
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 19-05-1986
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in iii-v and ii-vi semiconductors; Exact sciences and technology; Physics; Structure of solids and liquids; crystallography; Ion implantation; Photoelectron spectrum; Amorphization; Silicon Oxides; X ray; Experimental study; Arsenic Atomic ions; Inorganic compound
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.96921

X-ray photoelectron spectroscopy (XPS) has been applied to characterize the damage introduced into SiO2 by ion implantation. By measuring the peak width of Si2p from SiO2 which corresponds to perturbation of the SiO2 network, good depth profiles of the damage have been obtained for implanted samples and subsequently annealed samples. The results show that the damage distributed more widely than that calculated from energy deposition and that the perturbation of the network is caused not only by radiation damage but also by the existence of impurities in the network. It has been found that the XPS method is effective to understand the atomic structure, and thus, electrical properties of SiO2.