Symmetric self-electro-optic effect device using symmetric-cavity quantum well electroabsorption modulators

• Published in: IEEE photonics technology letters Vol. 6; no. 8; pp. 939 - 941
• Main Authors: Zouganeli, P., Grindle, R.J., Rivers, A.W., Parry, G., Roberts, J.S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-08-1994; Institute of Electrical and Electronics Engineers
• Subjects: Absorption; Exact sciences and technology; Excitons; Fabry-Perot; Fundamental areas of phenomenology (including applications); Insertion loss; Joining processes; Mirrors; Optical computers, logic elements, interconnects, switches; neural networks; Optical elements, devices, and systems; Optical processors, correlators, and modulators; Optical reflection; Optics; Physics; Reflectivity; Rivers; Aluminium arsenides; Electroabsorption modulator; Gallium arsenides; Inorganic compounds; Ternary compounds; Quantum wells; Symmetric configuration; Fabry Pérot modulator; Binary compounds; Bistable; Optical bistability; Experimental study; Reflectivity; Optical modulators
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.313058

We report results obtained from a symmetric-cavity Fabry-Perot quantum well modulator in GaAs/AlGaAs. A reflection-change of /spl ap/46% with an insertion loss of 1.3 dB are obtained in the normally-off mode under a reverse bias voltage of 7.5 V. Bistable operation is demonstrated, for the first time using such devices, by connecting two modulators in the symmetric self-electro-optic effect device configuration.< >