Role of defects in tailoring the structural, electrical and optical properties of Schottky diodes based on GaAsBi alloy through gamma radiation

• Published in: Materials science in semiconductor processing Vol. 179; p. 108482
• Main Authors: Alhassan, Sultan, Felix, Jorlandio F., Marroquin, John Fredy R., Alshammari, Alhulw H., Al mashary, Faisal, de Azevedo, Walter M., Alhassn, Amra, Alghamdi, Haifa, Al Saqri, N., Kazakov, Igor P., da Silva, SebastiãoW, Henini, Mohamed
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 15-08-2024
• Subjects: Dilute bismides; Electrical properties; Gamma irradiation; Optical properties; Gamma irradiation; Dilute bismides; Electrical properties; Optical properties
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2024.108482

This work provides an extensive study of the influence of γ-rays on structural, electrical, and optical characteristics of GaAsBi Schottky diodes fabricated through Molecular Beam Epitaxy (MBE) on GaAs substrates. An important finding is the direct correlation observed between the radiation dose and the consequent increase in the turn-on voltage of the devices. X-ray diffraction (XRD) showed that only phases related to the GaAs and GaAs1-xBix layers were observed. Raman spectroscopy proved to be a powerful tool to elucidate the effects of ionizing radiation on GaAsBi samples. From the results of electrical measurements, such as current density-voltage, the characteristic parameters of the devices improved as a function of the radiation dose. Conversely, the Capacitance-Voltage (C–V) characteristics indicated a rise in the concentration of free carriers in all irradiated samples, suggesting an enhancement in the performance of the diodes. Assessment through Deep Level Transient Spectroscopy (DLTS) further revealed a reduction in the number of electrically active traps following irradiation. Consequently, the findings presented here highlight the potential improvements in diode performance resulting from sample irradiation. Upon subjecting the samples to irradiation doses of 50 kGys and 100 kGys, we identified the presence of three and two electron traps, respectively. This differs from the unirradiated diodes, which displayed four electron traps. Interestingly, the photoluminescence intensity of the main peak exhibited an increment with increasing irradiation dose. This observation implies an enhancement in the optical characteristic, as well as annihilation/contribution of Bi-related traps. These findings corroborate the electrical results obtained in our study. Finally, the Raman results showed that the decrease in the lifetime of the photoexcited carriers leads to a higher recombination rate which in turn leads to a higher photoluminescence (PL) intensity after radiation.