Pseudo-dielectric function spectra of the near surface layer of GaAs implanted with various fluence of Xe+ ions

• Published in: Thin solid films Vol. 756; p. 139376
• Main Authors: Tuan, P.L., Kulik, M., Phuc, T.V., Madadzada, A.I., Zelenyak, T.Yu, Turek, M., Żuk, J., Mita, C., Stanculescu, A., Doroshkevich, A.S., Jasinska, B., Khiem, L.H., Anh, N.N., My, N.T. Bao
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 31-08-2022
• Subjects: Gallium arsenide; Ion implantation; Optical constants; Pseudo-dielectric function; Spectroscopic ellipsometry; Ion implantation; Spectroscopic ellipsometry; Gallium arsenide; Pseudo-dielectric function; Optical constants
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2022.139376

•Xe+ ion implantation affects the near surface gallium arsenide.•The transition from crystalline to amorphous phase were studied.•The native oxide layer's refractive index and extinction coefficients have been calculated.
Monocrystalline (100) semi-insulating gallium arsenide (GaAs) samples were irradiated with a 250-keV Xe+ ion beam at room temperature. To investigate the effect of ion irradiation on GaAs samples, the ion fluence was varied from 1 × 1012 to 3 × 1016 ions/cm2. The spectroscopic ellipsometry (SE) method and the Rutherford backscattering spectrometry (RBS) with nuclear reaction (NR) method were used to determine the properties of the virgin and implanted samples. The SE approach reveals that the pseudo-dielectric function of implanted GaAs samples varies with ion fluence. The RBS approach, which exposes the depth-profile of As, Ga, and Xe in the implanted samples, allows us to correlate changes in the pseudo-dielectric function with structural modifications caused by the ion irradiation. The NR approach points out the existence of an oxygen-enriched layer on the surface of implanted GaAs samples. Lastly, the optical study involving the Cauchy and Urbach dispersion model measures the refractive index n and extinction coefficient k of the native oxide layer on the surface of GaAs samples.