Status of II–VI molecular-beam epitaxy technology

• Published in: Materials chemistry and physics Vol. 43; no. 2; pp. 103 - 107
• Main Authors: Wu, Owen K., Rajavel, R.D., Jensen, J.E.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 1996; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Molecular-beam epitaxy technology; Optoelectronic devices; Physics; Optoelectronic devices; Molecular-beam epitaxy technology; Thin films; Molecular beam epitaxy; Molecular beams; II-VI semiconductors; Optical properties
• ISSN: 0254-0584; 1879-3312
• DOI: 10.1016/0254-0584(95)01614-Z

II–VI materials have numerous optoelectronic applications such as HgCdTe for IR imaging and ZnSe for full color flat panel, optical recording and under-water communications. p-Type doping in II–VI materials was one of the major technological hurdles. However, significant progress has been made in II–VI molecular-beam epitaxy (MBE) technology over the last two years. In the narrow bandgap HgCdTe arena, device quality materials have been grown with alloy compositions required for short to long-wavelength applications. Specifically, high performance IR imaging arrays (64 × 64) have recently been fabricated using MBE-grown double layer p-on-n structure. In addition, dual-band detectors and injection IR diode lasers have been demonstrated recently also with the HgCdTe MBE technology. In the wide bandgap arena, many MBE groups worldwide have been extensively pursuing research in ZnSe-related compounds. It is anticipated that the improvement in II–VI MBE technology will continue to accelerate in the next few years for manufacturing of optoelectronic devices.