Intense laser field effects on the binding energy of impurities in semiconductors
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Published in: | Physical review. B, Condensed matter and materials physics Vol. 75; no. 7 |
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Main Authors: | , , , , , |
Format: | Journal Article |
Language: | English |
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01-02-2007
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ArticleNumber | 073201 |
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Author | da Silva, E. F. Nunes, O. A. C. Lima, F. M. S. Amato, M. A. Fonseca, A. L. A. Olavo, L. S. F. |
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Cites_doi | 10.1002/pssb.2221860233 10.1063/1.117842 10.1103/PhysRevB.70.035307 10.1103/PhysRevLett.52.613 10.1103/PhysRevB.51.9643 10.1103/PhysRevB.57.15282 10.1103/PhysRevLett.61.939 10.1103/PhysRevLett.21.838 10.1088/0953-4075/35/18/201 10.1103/PhysRevA.44.R4110 10.1016/S0038-1098(02)00084-4 10.1088/0022-3719/13/10/023 10.1063/1.2808941 10.1142/S021797920301834X 10.1103/PhysRevLett.76.4576 10.1016/0375-9601(88)90051-5 10.1088/0953-8984/10/47/022 10.1063/1.335974 10.1103/PhysRevB.53.16481 10.1139/p85-149 10.1063/1.124503 10.1016/0038-1098(83)90799-8 |
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References | F. Ehlotzky (PhysRevB.75.073201Cc21R1) 1985; 63 J. P. Lowe (PhysRevB.75.073201Cc22R1) 2006 D. Neamen (PhysRevB.75.073201Cc8R1) 2002 (PhysRevB.75.073201Cc2R1) 2004 J. C. Slater (PhysRevB.75.073201Cc24R1) 1968 PhysRevB.75.073201Cc1R2 PhysRevB.75.073201Cc1R1 PhysRevB.75.073201Cc16R1 PhysRevB.75.073201Cc15R1 PhysRevB.75.073201Cc14R1 M. Gavrila (PhysRevB.75.073201Cc11R1) 1992 PhysRevB.75.073201Cc10R1 PhysRevB.75.073201Cc9R1 M. Gavrila (PhysRevB.75.073201Cc12R1) 2000 PhysRevB.75.073201Cc7R1 PhysRevB.75.073201Cc5R2 PhysRevB.75.073201Cc6R1 PhysRevB.75.073201Cc1R5 PhysRevB.75.073201Cc4R2 PhysRevB.75.073201Cc5R1 PhysRevB.75.073201Cc1R4 PhysRevB.75.073201Cc4R1 PhysRevB.75.073201Cc1R3 PhysRevB.75.073201Cc3R1 PhysRevB.75.073201Cc21R2 PhysRevB.75.073201Cc19R1 PhysRevB.75.073201Cc19R2 |
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Title | Intense laser field effects on the binding energy of impurities in semiconductors |
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