Pressure Dependence of Band Discontinuity in GaAs/AlInP Quantum Well Structures

Pressure Dependence of Band Discontinuity in GaAs/AlInP Quantum Well Structures

We have performed high-pressure photoluminescence measurements on GaAs/AlInP quantum wells of widths 10 to 100 Å at liquid helium temperatures. It is found from the pressure coefficient that the X minima in the AlInP become lower than the confined Γ state in the GaAs wells with widths of less than 3...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 32; no. S1; p. 151
Main Authors: Nakayama, Takeshi, Minami, Fujio, Nagao, Satoru, Inoue, Yuichi, Gotoh, Hideki
Format: Journal Article
Language:English
Published: 01-01-1993
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Summary:We have performed high-pressure photoluminescence measurements on GaAs/AlInP quantum wells of widths 10 to 100 Å at liquid helium temperatures. It is found from the pressure coefficient that the X minima in the AlInP become lower than the confined Γ state in the GaAs wells with widths of less than 30 Å. The zero-pressure extrapo-lation of the AlInP(X) to GaAs(Γ) transitions yields a 680 meV valence-band offset and a 770 meV conduction-band offset.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAPS.32S1.151