Planar Dechannelling of Energetic Ions at Dislocations. III. Dechannelling at Edge Dislocations in Si
The planar dechannelling cross-sections of MeV ions at dislocations were calculated and the results were summarized in graphs, from which the dechannelling cross-section at a dislocation in an arbitrary crystal can be derived. The observed planar dechannelling cross-sections at edge dislocations in...
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| Published in: | Japanese Journal of Applied Physics Vol. 21; no. 12R; p. 1769 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-12-1982
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| Online Access: | Get full text |
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| Summary: | The planar dechannelling cross-sections of MeV ions at dislocations were calculated and the results were summarized in graphs, from which the dechannelling cross-section at a dislocation in an arbitrary crystal can be derived. The observed planar dechannelling cross-sections at edge dislocations in Si crystals implanted with phosphorus ions were compared with those derived from the calculated graphs, and the agreement between them was found to be satisfactory. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.21.1769 |