Theory of the Polarization Dependence of Two-photon Absorption in Zinc-blende Semiconductors

• Published in: Journal of modern optics Vol. 41; no. 6; pp. 1141 - 1149
• Main Authors: Hutchings, D.C., Wherrett, B.S.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: London Taylor & Francis Group 01-06-1994; Taylor & Francis
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physics; Perturbation theory; Band structure; Gallium arsenides; Inorganic compounds; Semiconductor materials; Indium antimonides; Theoretical study; Polarized beams; Circular dichroism; Anisotropy; Dichroism; Two-photon spectra; Absorption spectra
• ISSN: 0950-0340; 1362-3044
• DOI: 10.1080/09500349414551081

The polarization dependence of two-photon absorption is calculated for several zinc-blende semiconductors. The spectral dependence of the linear/circular dichroism is determined using an isotropic, four-band Kane band-structure model and is shown to have specific features associated with the split-off band. The crystalline orientational dependence is determined using an anisotropic band-structure model obtained by additionally including the next highest upper conduction band set. It is shown that the anisotropic behaviour of the two-photon absorption is small in InSb but is quite substantial in GaAs giving a variation in the two-photon absorption coefficient for linearly polarized light of around 70% at a wavelength of 1 μm.