Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3$mu$m

Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3$mu$m

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Bibliographic Details
Published in:IEEE photonics technology letters Vol. 18; no. 18; pp. 1913 - 1915
Main Authors: Geerlings, E., Rattunde, M., Schmitz, J., Kaufel, G., Zappe, H., Wagner, J.
Format: Journal Article
Language:English
Published: 01-09-2006
Online Access:Get full text
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Description
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.881658