Characteristics of surface states at the insulator-semiconductor interface of ZnS:Mn thin-film electroluminescent emitters

• Published in: Technical physics letters Vol. 36; no. 1; pp. 26 - 30
• Main Authors: Gurin, N. T., Sabitov, O. Yu, Afanas’ev, A. M.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-01-2010
• Subjects: Classical and Continuum Physics; Physics; Physics and Astronomy; Conduction Band Bottom; Phosphor Layer; Technical Physic Letter; Surface State; Insulator Interface
• ISSN: 1063-7850; 1090-6533
• DOI: 10.1134/S1063785010010098

The energy distribution of the density of occupied surface states (
N
ss
) at the cathode insulatorphosphor interface in ZnS:Mn electroluminescent thin-film (ELTF) emitters has been modeled on the basis of experimental data. Changes in this distribution depending on the parameters of exciting voltage pulses have been studied. It is established that the energy distribution of
N
ss
shifts toward deeper levels upon a decrease in the frequency of the exciting signal and the resulting increase in the pause between the adjacent switch-on states. This behavior corresponds to a cascade relaxation mechanism of electrons trapped on the surface states. Maximum values of the
N
ss
(∼2.5 × 10
13
cm
−2
) and the specific density of surface states per unit energy (2 × 10
14
–10
15
cm
−2
eV
−1
) are determined for the cathode insulator-phosphor interface from which electrons are tunneling. Positions of the equilibrium (∼1.25 eV below the conduction-band bottom) and the quasi-equilibrium (0.6–1.25 eV) Fermi levels during the ELTF emitter operation are estimated.