Interface trapping properties of nMOSFETs with Al2O3/SiOxNy/Si(100) gate dielectric stacks after exposure to ionizing radiation

• Published in: Microelectronic engineering Vol. 72; no. 1-4; pp. 50 - 54
• Main Authors: FELIX, J. A, XIONG, H. D, FLEETWOOD, D. M, GUSEV, E. P, SCHRIMPF, R. D, STERNBERG, A. L, D'EMIC, C
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier Science 01-04-2004
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Voltage threshold; Interface state; MOSFET; Radiation effects; Density of states; Border traps; Interface traps; Threshold current; 1/f noise; Charge carrier trapping; Interface properties; Ionizing irradiation; Ionizing radiation; Radiation effect; Charge pumping; High-κ; NMOS technology
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2003.12.015

The interface properties of Al2O3/SiOxNy/Si(100) nMOSFETs are examined using sub-threshold current-voltage, variable base charge pumping, and low frequency (1/f) noise measurements. It is shown that exposure to ionizing irradiation leads to a reduction in effective interface trap density (Dit) for both positive and negative bias irradiations. This effect may result from radiation-induced neutralization of a large pre-irradiation density of border traps.