Admittance spectroscopy as a method for investigating relaxation processes in quantum-sized heterostructures

The wide possibilities of admittance spectroscopy as a tool for the effective study of relaxation processes in quantum-sized heterostructures are demonstrated by the example of comprehensive investigations of InGaN/GaN semiconductor heterostructures with multiple quantum wells. The nature of emittin...

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Bibliographic Details
Published in:	Bulletin of the Russian Academy of Sciences. Physics Vol. 75; no. 10; pp. 1406 - 1412
Main Authors:	Zubkov, V. I., Yakovlev, I. N., Koucherova, O. V., Orlova, T. A.
Format:	Journal Article
Language:	English
Published:	Heidelberg Allerton Press, Inc 01-10-2011 Springer Nature B.V
Subjects:	Current carriers Electrical impedance Gallium nitrides Hadrons Heavy Ions Heterostructures Indium gallium nitrides Nuclear Physics Physics Physics and Astronomy Quantum wells Resistance Spectroscopic analysis Spectrum analysis Space Charge Region Deep Level Transient Spectroscopy Admittance Spectroscopy Cole Diagram Quantum Well
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Summary:	The wide possibilities of admittance spectroscopy as a tool for the effective study of relaxation processes in quantum-sized heterostructures are demonstrated by the example of comprehensive investigations of InGaN/GaN semiconductor heterostructures with multiple quantum wells. The nature of emitting centers in InGaN/GaN nanoheterostructures was determined from the character of charge carrier relaxation, as revealed from the temperature spectra of conductance.
ISSN:	1062-8738 1934-9432
DOI:	10.3103/S1062873811100339