High-Voltage LDMOS Transistors on an SOI Structure for Electronics That Operate in Extreme Conditions

High-Voltage LDMOS Transistors on an SOI Structure for Electronics That Operate in Extreme Conditions

The parameters of high-voltage LDMOS transistors on a silicon structure on an insulator formed in a technological cycle combined with the manufacturing technology of low-voltage CMOS LSI are investigated. LDMOS transistors are studied under conditions of the temperature changing in the range –60 to...

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Bibliographic Details
Published in:Russian microelectronics Vol. 49; no. 4; pp. 285 - 294
Main Authors: Babkin, S. I., Volkov, S. I., Glushko, A. A., Morozov, S. A., Novoselov, A. S., Stolyarov, A. A.
Format: Journal Article
Language:English
Published: Moscow Pleiades Publishing 01-07-2020
Springer Nature B.V
Subjects:
CMOS
Electrical Engineering
Engineering
High voltages
Ionizing radiation
Semiconductor devices
Transistors
Online Access:Get full text
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Summary:The parameters of high-voltage LDMOS transistors on a silicon structure on an insulator formed in a technological cycle combined with the manufacturing technology of low-voltage CMOS LSI are investigated. LDMOS transistors are studied under conditions of the temperature changing in the range –60 to 300°C and exposure to ionizing radiation.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739720030026