Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells

• Published in: Applied solar energy Vol. 58; no. 4; pp. 490 - 496
• Main Authors: Egamberdiev, B. E., Utamurodova, Sh. B., Tachilin, S. A., Karimov, M. A., Rashidov, K. Yu, Kakhramonov, A. R., Kurbanov, M. K., Saidov, D. Sh, Turopova, S. U.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-08-2022; Springer Nature B.V
• Subjects: Doping; Earth; Electrical Machines and Networks; Engineering; Gadolinium; Holmium; Impurities; Irradiation; Optical activity; Parameters; Photoelectric cells; Photovoltaic cells; Power Electronics; Radiation tolerance; Rare earth elements; Silicon; Solar cells; Solar energy; Solar Materials Science; radiation dose; solar cell; holmium; rare earth elements; gamma irradiation; gadolinium
• ISSN: 0003-701X; 1934-9424
• DOI: 10.3103/S0003701X22040065

A technology has been developed for manufacturing solar cells based on silicon doped with impurity atoms of rare-earth elements holmium and gadolinium. It has been established that at a concentration of doping with holmium and gadolinium of 10
17
cm
–3
, the efficiency of solar cells increases on average by 15% relative to the control ones. An increase in the radiation resistance of solar cells based on silicon doped with rare earth elements holmium and gadolinium during irradiation with gamma quanta is shown. Rare-earth elements holmium and gadolinium, introduced into silicon during growth, are present in it in the form of various impurity precipitations and complexes, being electrically inactive, actively interacting with vacancies and residual impurities, reduce the concentration of optically active oxygen and carbon, increasing the thermal and radiation stability of the parameters of the original silicon.