Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions

• Published in: Russian microelectronics Vol. 48; no. 3; pp. 197 - 201
• Main Authors: Brinkevich, D. I., Kharchenko, A. A., Prosolovich, V. S., Odzhaev, V. B., Brinkevich, S. D., Yankovskii, Yu. N.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-05-2019; Springer Nature B.V
• Subjects: Absorption spectra; Electrical Engineering; Engineering; Ion implantation; Photoresists; Reflectance; Reflection; Refractivity; Silicon wafers; Spin coating; Thick films
• ISSN: 1063-7397; 1608-3415
• DOI: 10.1134/S1063739719020021

We investigate FP9120 positive photoresist films 1.8 μm thick that are spin-coated on the surface of KDB-10 (111) silicon wafers and implanted with В
+
and Р
+
ions by measuring the reflection’s spectra. It is shown that implantation reduces the refractive index of the photoresist. In the opacity region of the photoresist film, the reflection coefficient grows with an increasing implantation dose, especially in the case of P
+
ion implantation. The spectral dependences of the optical length for the implanted photoresist films have two regions with anomalous dispersion near the wavelengths of 350 and 430 nm, which correspond to the absorption bands of naphthoquinone diazide molecules.