Evaluation of BBr2+ and B++Br+ implants in silicon

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 124-125; pp. 196 - 199
• Main Authors: Sharp, J.A., Gwilliam, R.M., Sealy, B.J., Jeynes, C., Hamilton, J.J., Kirkby, K.J.
• Format: Journal Article
• Language: English
• Published: 05-12-2005
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2005.08.065

The work carried out here examines the suitability of BBr2+ and B+ + Br+ implants into crystalline (100) silicon for ultra-shallow junctions (USJ applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is created during implantation of BBr2+, eliminati the need for a separate pre-amorphising implant. This amorphous region re-grows during subsequent rapid thermal annealing and there is evider that bromine retards the re-growth velocity. Hall Effect measurements after rapid thermal annealing show a difference in electrical activati between the BBr2+ and B+ + Br+ implants with the latter having the lower activation. Anomalous Hall mobility is also observed for the molecu implant at lower annealing temperatures.