Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy

Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 37; no. 8; pp. 955 - 959
Main Authors: Zotova, N. V., Kizhaev, S. S., Molchanov, S. S., Voronina, T. I., Lagunova, T. S., Pushnyi, B. V., Yakovlev, Yu. P.
Format: Journal Article
Language:English
Published: 01-08-2003
Online Access:Get full text
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Description
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1601666