Diffusion of boron and phosphorus in silicon during high-temperature ion implantation

Diffusion of boron and phosphorus in silicon during high-temperature ion implantation

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 31; no. 4; pp. 321 - 325
Main Author: Gadiyak, G. V.
Format: Journal Article
Language:English
Published: 01-04-1997
Online Access:Get full text
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Description
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1187179