Physical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum

Physical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 32; no. 9; pp. 966 - 969
Main Authors: Gadiyak, G. V., Stathis, J. H.
Format: Journal Article
Language:English
Published: 01-09-1998
Online Access:Get full text
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Description
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1187526