Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure
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Published in: | Electronic materials letters Vol. 12; no. 2; pp. 232 - 236 |
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Main Authors: | , , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
01-03-2016
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Online Access: | Get full text |
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ISSN: | 1738-8090 2093-6788 |
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DOI: | 10.1007/s13391-015-5249-9 |