Dielectric properties of random and 〈100〉 oriented SrTiO3 and (Ba,Sr)TiO3 thin films fabricated on 〈100〉 nickel tapes

• Published in: Applied physics letters Vol. 81; no. 16; pp. 3028 - 3030
• Main Authors: Dawley, J. T., Clem, P. G.
• Format: Journal Article
• Language: English
• Published: 14-10-2002
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1516630

Properties are presented for random and enhanced 〈100〉 orientation SrTiO3 and BaxSr1−xTiO3 (x=0.33, 0.50, and 0.67) films fabricated on base-metal 〈100〉 Ni tapes using a chemical solution deposition approach. Films were crystallized in a reducing atmosphere, which prevented Ni oxidation, but permitted growth of SrTiO3 and BaxSr1−xTiO3 films with dielectric loss tan δ between 0.003 and 0.015. For randomly oriented BaxSr1−xTiO3 (x=0, 0.33, 0.5, and 0.67) films, zero-field 100 kHz dielectric constants ranged from 250 to 420. Films with enhanced 〈100〉 orientation exhibited zero-field dielectric constants of 980 to 1500, three times higher than random films. Development of such high dielectric constants on Ni suggests a future method for inexpensive, high performance base-metal electrode capacitor fabrication.