Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate
A 30 nm (100) GaAs layer was transferred by twist wafer bonding to a (100) GaAs handling wafer. A similar structure was proposed in the literature as a “compliant substrate.” Transmission electron microscopy and x-ray diffraction of 40 and 300 nm epitaxial InGaAs films (0.5% misfit) showed no eviden...
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| Published in: | Applied physics letters Vol. 76; no. 6; pp. 703 - 705 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
07-02-2000
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| Online Access: | Get full text |
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