A model of radiative recombination in n -type porous silicon–aluminum Schottky junction
It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. A theoretical model of luminescence from reverse biased p-n junc...
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| Published in: | Applied physics letters Vol. 74; no. 14; pp. 1960 - 1962 |
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| Main Authors: | , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
05-04-1999
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| Online Access: | Get full text |
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| Summary: | It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. A theoretical model of luminescence from reverse biased p-n junction has been developed for this n-type porous silicon–aluminium Schottky junction to explain the higher efficiency of these electroluminescence devices in comparison with that from a reverse biased p-n junction structure. Through this model, it is possible to understand the steps that are necessary to improve the efficiency of porous-aluminum Schottky junction. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.123741 |