Si tunnel transistors with a novel silicided source and 46mV/dec swing

• Published in: 2010 Symposium on VLSI Technology pp. 121 - 122
• Main Authors: Kanghoon Jeon, Wei-Yip Loh, Patel, P, Chang Yong Kang, Jungwoo Oh, Bowonder, A, Chanro Park, Park, C S, Smith, C, Majhi, P, Hsing-Huang Tseng, Jammy, R, Liu, Tsu-Jae King, Chenming Hu
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-06-2010
• Subjects: Current measurement; Logic gates; Phantoms; Silicides; Silicon; Transistors; Tunneling
• ISBN: 9781424454518; 1424454514
• ISSN: 0743-1562
• DOI: 10.1109/VLSIT.2010.5556195

We report a novel tunneling field effect transistor (TFET) fabricated with a high-k/metal gate stack and using nickel silicide to create a special field-enhancing geometry and a high dopant density by dopant segregation. It produces steep subthreshold swing (SS) of 46 mV/dec and high I ON /I OFF ratio (~10 8 ) and the experiment was successfully repeated after two months. Its superior operation is explained through simulation. For the first time convincing statistical evidence of sub-60mV/dec SS is presented. More than 30% of the devices show sub-60mV/dec SS after systemic data quality checks that screen out unreliable data.