Electromigration reliability of Mn-doped Cu interconnects for the 28 nm technology

Electromigration reliability of Mn-doped Cu interconnects for the 28 nm technology

Electromigration (EM) reliability of Cu interconnects for the 28 nm node with Mn doping was studied by investigating the effects of line width and length on void formation kinetics, EM lifetime and statistics. Failure modes and mass transport mechanism responsible for EM degradation of CuMn intercon...

Full description

Saved in:
Bibliographic Details
Published in:2013 IEEE International Reliability Physics Symposium (IRPS) pp. EM.5.1 - EM.5.4
Main Authors: Linjun Cao, Ho, P. S., Justison, P.
Format: Conference Proceeding
Language:English
Published: IEEE 01-04-2013
Subjects:
CuMn
Current density
current direction
Doping
electromigration
failure modes
Manganese
Resistance
Semiconductor device reliability
short length
Stress
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electromigration (EM) reliability of Cu interconnects for the 28 nm node with Mn doping was studied by investigating the effects of line width and length on void formation kinetics, EM lifetime and statistics. Failure modes and mass transport mechanism responsible for EM degradation of CuMn interconnects were examined. Although immortality was not observed, EM lifetime of short lines was significantly improved together with a reduction in lifetime deviation. This is attributed to the effectiveness of Mn in repairing process defects, particularly for via-related void formation in V1M2 electron flow direction.
ISBN:9781479901128
1479901121
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2013.6532080