Enhanced dielectric and piezoelectric properties of low-temperature processed Pb(Zr,Ti)O₃ thick films prepared by hybrid deposition technique with chemical solution infiltration process

• Published in: Materials letters Vol. 65; no. 19-20; pp. 3041 - 3043
• Main Authors: Kim, Seung-Hyun, Koo, Chang Young, Lee, Jinkee, Jiang, Wenyan, Kingon, Angus I
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-10-2011
• Subjects: annealing; Deposition; Dielectric constant; Electrical properties; Grain size; Infiltration; lead; Lead zirconate titanates; microstructure; ozone; Piezoelectricity; temperature; Thick films
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2011.06.058

High quality PZT thick films over 10μm were successfully prepared using a chemical solution infiltration into the porous screen-printed PZT thick films. The hybrid films prepared with solution infiltration process showed very dense and uniform microstructure with large grain size at a low annealing temperature such as 700°C. The hybrid films showed markedly enhanced electrical properties. The measured dielectric constant, the remanent polarization and the piezoelectric d₃₃ coefficient of the films were 1900, 27μC/cm², and 230pC/N, respectively, which were over two times higher than those of the screen printed films without the solution infiltration process.