Power generation in GaAs at frequencies far in excess of the intrinsic Gunn frequency

Power generation in GaAs at frequencies far in excess of the intrinsic Gunn frequency

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Bibliographic Details
Published in:Proceedings of the IEEE Vol. 54; no. 4; p. 710
Main Author: Kennedy, W.K.
Format: Journal Article
Language:English
Published: IEEE 01-01-1966
Subjects:
Diodes
Frequency
Gallium arsenide
Gunn devices
Injection-locked oscillators
Iris
Microwave oscillators
Power generation
Tunable circuits and devices
Voltage
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Description
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1966.4828