Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO and Non-Crystalline Hf Silicates

This paper provides an explanation for qualitative differences between radiation-induced charge trapping states in nano-crystalline HfO 2 and non-crystalline Hf silicate alloys in high-kappa gate stacks by combining electrical measurements with spectroscopic studies and theory. Differences in the ob...

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Bibliographic Details

Published in:	IEEE transactions on nuclear science Vol. 53; no. 6; pp. 3644 - 3648
Main Authors:	Lucovsky, G., Fleetwood, D.M., Lee, S., Seo, H., Schrimpf, R.D., Felix, J.A., Luning, J., Fleming, L.B., Ulrich, M., Aspnes, D.E.
Format:	Journal Article
Language:	English
Published:	IEEE 01-12-2006
Subjects:	Charge carrier processes Charge measurement Charge trapping Current measurement Dielectric measurements Electric variables measurement Electron traps Grain boundaries Hafnium oxide high- kappa dielectrics hole traps metal-oxide-semiconductor (MOS) devices oxide-trap charge Oxygen Spectroscopy
Online Access:	Get full text
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