Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
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| Published in: | Semiconductor physics, quantum electronics, and optoelectronics Vol. 17; no. 4; pp. 398 - 402 |
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| Main Author: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
10-11-2014
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| Online Access: | Get full text |
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| ISSN: | 1560-8034 1605-6582 |
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| DOI: | 10.15407/spqeo17.04.398 |