Effects of Zn-doping on structure and electrical properties of p-type conductive CuCr1−x Zn x O2 delafossite oxide
Delafossite-type CuCr₁₋ₓ Zn ₓ O₂ (x = 0, 0.03, 0.05, 0.07, 0.1) conductive oxides were synthesized by sol–gel method, and the effects of Zn-doping on morphology, structure, and electrical properties of the CuCr₁₋ₓ Zn ₓ O₂ oxides were investigated. Based on X-ray diffraction (XRD) and Raman spectrum,...
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Published in: | Journal of materials science Vol. 51; no. 7; pp. 3592 - 3599 |
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Main Authors: | , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
New York
Springer US
01-04-2016
Springer Nature B.V |
Subjects: | |
Online Access: | Get full text |
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Summary: | Delafossite-type CuCr₁₋ₓ Zn ₓ O₂ (x = 0, 0.03, 0.05, 0.07, 0.1) conductive oxides were synthesized by sol–gel method, and the effects of Zn-doping on morphology, structure, and electrical properties of the CuCr₁₋ₓ Zn ₓ O₂ oxides were investigated. Based on X-ray diffraction (XRD) and Raman spectrum, the crystalline quality of the oxides is improved by the suitable substitution of Cr by Zn. The X-ray photoelectron spectroscopy (XPS) spectra reveal the chemical state of Zn is +2. The Hall and Seebeck coefficients of the pellet samples display a positive sign, indicating p-type conductive characteristics of the obtained oxides. The temperature-dependent resistivity of the oxides is proven to be consistent with small polaron hopping. For the three oxide samples with x = 0, 0.05, and 0.1, the activation energies for the polaron hopping between Zn²⁺ and Cr³⁺ sites are 54, 41.5, 32 meV, respectively, which is found to decrease with the increase of Zn content. The electrical conductivity can be remarkably improved by Zn-doping due to the small polaron hopping activation energy. These properties render this material promising as transparent electrode in optoelectronic industry. |
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Bibliography: | http://dx.doi.org/10.1007/s10853-015-9679-4 |
ISSN: | 0022-2461 1573-4803 |
DOI: | 10.1007/s10853-015-9679-4 |