Preparation and Properties of Thin HfO2 Films

• Published in: Inorganic materials Vol. 41; no. 12; pp. 1300 - 1304
• Main Authors: Yakovkina, L. V., Kichai, V. N., Smirnova, T. P., Kaichev, V. V., Shubin, Yu. V., Morozova, N. B., Zherikova, K. V., Igumenov, I. K.
• Format: Journal Article
• Language: English
• Published: 01-12-2005
• ISSN: 0020-1685; 1608-3172
• DOI: 10.1007/s10789-005-0305-8

HfO2 layers were grown on silicon by metalorganic chemical vapor deposition using (C5H5)2Hf(CH3)2, (C5H5)2Hf(N(C2H5)2)2, and Hf(dpm)4 as volatile precursors and were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, and IR spectroscopy. The films were shown to consist of monoclinic HfO2 and to contain hafnium silicide and silicate at the HfO2/Si interface. The presence of hafnium silicide was attributed to oxygen deficiency produced by argon ion milling. Hafnium silicate was formed as a result of the reaction between hafnium and silicon oxides during annealing. Current-voltage and capacitance-voltage measurements on Al/HfO2/Si test structures were used to determine the dielectric permittivity and electrical resistivity of the films: epsilon = 15-20, p ~ 1015 Omega cm.