Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

• Published in: 2009 IEEE International Electron Devices Meeting (IEDM) pp. 1 - 4
• Main Authors: Lin, D., Brammertz, G., Sioncke, S., Fleischmann, C., Delabie, A., Martens, K., Bender, H., Conard, T., Tseng, W.H., Lin, J.C., Wang, W.E., Temst, K., Vatomme, A., Mitard, J., Caymax, M., Meuris, M., Heyns, M., Hoffmann, T.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01-12-2009
• Subjects: Aluminum oxide; Capacitance-voltage characteristics; CMOS process; Dielectric substrates; Frequency; Indium gallium arsenide; MOS capacitors; MOSFETs; Performance evaluation; Temperature measurement
• ISBN: 9781424456390; 1424456398
• ISSN: 0163-1918; 2156-017X
• DOI: 10.1109/IEDM.2009.5424359

To address the integration of the high-mobility Ge/III-V MOSFET, a common gate stack (CGS) solution is proposed for the first time and demonstrated on Ge and InGaAs channels with combined hole and electron field-effect mobility values up to 400 cm 2 /eV-s and 1300 cm 2 /eV-s. Based on the duality found on the InGaAs/Ge MOS system, this approach aims to integrate the InGaAs/Ge MOSFET processes for high performance CMOS applications with an emphasis on progressive EOT scaling.