144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates

We report lasing at temperatures as high as 144 °C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarter-wavelength stacks for one mirror. The characteristic temperature T0 of the device increases from 42 K at roo...

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Bibliographic Details
Published in:	Applied physics letters Vol. 61; no. 26; pp. 3095 - 3097
Main Authors:	DUDLEY, J. J, ISHIKAWA, M, BABIC, D. I, MILLER, B. I, MIRIN, R, JIANG, W. B, BOWERS, J. E, HU, E. L
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 28-12-1992
Subjects:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers; laser diodes Gallium Indium Arsenides phosphides Mixed Vertical cavity laser Optical pumping High temperature Semiconductor laser
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Summary:	We report lasing at temperatures as high as 144 °C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarter-wavelength stacks for one mirror. The characteristic temperature T0 of the device increases from 42 K at room temperature to 81 K at temperatures above 80 °C as the gain peak moves into resonance with the longer wavelength cavity mode.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.107972