Numerical simulation of the thermal oxidation of silicon in N2O ambient

Numerical simulation of the thermal oxidation of silicon in N2O ambient

Saved in:
Bibliographic Details
Published in:Solid-state electronics Vol. 38; no. 5; pp. 1113 - 1114
Main Authors: Gadiyak, G.V, Korobitsina, J.L
Format: Journal Article
Language:English
Published: 01-05-1995
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
ISSN:0038-1101
DOI:10.1016/0038-1101(95)98685-V