Cover Picture: Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature (Phys. Status Solidi RRL 7/2014)
A low‐cost and simple atmospheric chemical vapor deposition (APCVD) based double‐layer graphene is used to study its transport phenomena at temperature as high as 250 °C. Beyond this temperature the fabricated graphene transistor fails to function, indicating areas of improvements related to dielect...
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| Published in: | Physica status solidi. PSS-RRL. Rapid research letters Vol. 8; no. 7 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Berlin
WILEY-VCH Verlag
01-07-2014
WILEY‐VCH Verlag Wiley Subscription Services, Inc |
| Online Access: | Get full text |
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