Cover Picture: Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature (Phys. Status Solidi RRL 7/2014)

• Published in: Physica status solidi. PSS-RRL. Rapid research letters Vol. 8; no. 7
• Main Authors: Qaisi, Ramy M., Smith, Casey E., Hussain, Muhammad M.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01-07-2014; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• ISSN: 1862-6254; 1862-6270
• DOI: 10.1002/pssr.201470538

A low‐cost and simple atmospheric chemical vapor deposition (APCVD) based double‐layer graphene is used to study its transport phenomena at temperature as high as 250 °C. Beyond this temperature the fabricated graphene transistor fails to function, indicating areas of improvements related to dielectric engineering and device isolation. At the same time, it is interesting to note that such low band gap graphene operated fully even at gate current densities as high as 1 A/cm2 and channel current densities as high as 1 MA/cm2 at 250 °C. The study by Ramy M. Qaisi et al. (pp. 621–624) can be a cornerstone to explore graphene as an alternate low‐cost material in place of traditional GaN and SiC based power devices for harsh environment application.