A 1/3-in 510(H)492(V) CCD image sensor with mirror image function

• Published in: IEEE transactions on electron devices Vol. 38; no. 5; pp. 954 - 959
• Main Authors: Hojo, J., Naito, Y., Mori, H., Foujikawa, K., Kato, N., Wakayama, T., Komatsu, E., Itasaka, M.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-05-1991; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Charge coupled devices; Charge transfer devices; Charge-coupled image sensors; Clocks; Diodes; Electronics; Exact sciences and technology; Image sensors; Lenses; Microoptics; Mirrors; Optical sensors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Shift registers; Characterization; CCD imaging; Dark current; Image sensor; Modeling; Implementation
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.78364

A 1/3-in optical format 510(H)*492(V) interline charge-coupled-device (CCD) image sensor with a mirror-image function has been developed. To realize both a normal image and a mirror image, the horizontal shift register (H-CCD) is transferred forward and backward by a four-electrode, quasi-two-phase clock drive. The unit cell size is 9.6(H)*7.5(V) mu m/sup 2/. An on-chip microlens has been developed to achieve a sensitivity of 28 mV/lx, which is higher than that of the conventional 1/2-in device. The hole accumulation diode (HAD) sensor used has the advantage of low dark current, negligibly small lag, high blooming suppression, and a variable-speed electronic shutter. The smear reduction level is -83 dB. Horizontal resolution of 330 TV lines is obtained.< >