Electrical passivation of Si∕SiGe∕Si structures by 1-octadecene monolayers

Electrical passivation of Si∕SiGe∕Si structures by 1-octadecene monolayers

The passivating effects of organic monolayers of 1-octadecene deposited onto the silicon surfaces of both n and p conductivities were studied for Si∕SiGe∕Si structures grown by molecular beam epitaxy and chemical vapor deposition. Measurements of the capacitance versus voltage and current versus vol...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters Vol. 91; no. 10
Main Authors: Antonova, Irina V., Soots, Regina A., Guliaev, Mitrofan B., Prinz, Victor Ya, Kagan, Miron S., Kolodzey, James
Format: Journal Article
Language:English
Published: United States 03-09-2007
Subjects:
CAPACITANCE
CHARGE CARRIERS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
ELECTRIC POTENTIAL
GERMANIUM ALLOYS
GERMANIUM SILICIDES
LAYERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
ORGANIC COMPOUNDS
PASSIVATION
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
SILICON OXIDES
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The passivating effects of organic monolayers of 1-octadecene deposited onto the silicon surfaces of both n and p conductivities were studied for Si∕SiGe∕Si structures grown by molecular beam epitaxy and chemical vapor deposition. Measurements of the capacitance versus voltage and current versus voltage were made on structures covered with the organic monolayer and compared with unpassivated structures covered with native silicon dioxide. The results demonstrate that the organic passivation provides a decrease of surface charge and an increase of carrier concentration in the near-surface layers and/or the SiGe quantum wells.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2775083