Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM

• Published in: Applied physics letters Vol. 125; no. 2
• Main Authors: Sun, Qian, Chi, Yaqing, Guo, Yang, Liang, Bin, Tao, Ming, Wu, Zhenyu, Guo, Hongxia, Zheng, Qiwen, Chen, Wangyong, Gao, Yulin, Zhao, Peixiong, Li, Xingji, Chen, Jianjun, Luo, Deng, Sun, Hanhan, Fang, Yahao
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 08-07-2024
• Subjects: Aerospace environments; Breakdown; Charge deposition; Failure analysis; Heavy ions; Random access memory; Static random access memory; Transistors
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0214621

This paper discusses the stuck bits induced by the gate breakdown of PMOS in the sub-20 nm FinFET static random access memory (SRAM) device. After the heavy-ion experiment, several stuck bits are in the FinFET SRAM matrix, which cannot be set or reset. To investigate the factors that caused the stuck bit, we perform the electrical failure analysis (EFA) to measure the electric characteristics of the transistors in the stuck bits and normal cells separately. The measurement results show a clear gate breakdown at the PMOS pull-up (PPU) transistor in all of the measured SRAM cells. Meanwhile, the SPICE simulation based on the EFA results verifies the impact of the damaged PPU. Finally, considering all of the phenomena, the charge deposition from single events is the major mechanism that causes the stuck bits in FinFET SRAM. The experiment results alert a potential gate breakdown risk in the ultra-high-density FinFET SRAM applied in the space environment.