Substrate temperature measurement in a molecular beam epitaxy chamber using in situ GaAs photoluminescence monitoring

We use GaAs photoluminescence (PL) obtained in situ in an epitaxial growth chamber to measure substrate temperatures from 25 to 450 °C with an accuracy of ±8 °C. Since temperature is obtained directly from the measured GaAs band gap, the approach is free of the problems associated with thermal conta...

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Bibliographic Details
Published in:	Applied physics letters Vol. 59; no. 10; pp. 1215 - 1217
Main Authors:	SANDROFF, C. J, TURCO-SANDROFF, F. S, FLOREZ, L. T, HARBISON, J. P
Format:	Journal Article
Language:	English
Published:	Melville, NY American Institute of Physics 02-09-1991
Subjects:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Crystal growth Support Photoluminescence Aluminium Gallium Arsenides Mixed Multiple layer High temperature Experimental study Gallium Arsenides Growth from vapor Energy gap Molecular beam condensation Chemical composition Heterojunction
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